| 摘要 |
<p>The present invention relates to a three-level converter half-bridge including a first substrate (2) and a second substrate (3) disposed separately from the first substrate (2). The first substrate (2) includes a first insulation material body (6a) and an electric conductivity structuring first conductive layer (7a) disposed on the first insulation material body (6a). A first power semiconductor switch (T1), a second power semiconductor switch (T2), a first diode (D1), and a first diode device (10) are disposed at and connected to the structuring first conductive layer (7a). A second substrate (3) includes a second insulation material body (6b) and an electric conductivity structuring second conductive layer (7b) disposed on the second insulation material body (6b).A third power semiconductor switch (T3), a fourth power semiconductor switch (T4), a second diode (D2), and a second diode device (11) are disposed at and connected to the structuring second conductive layer (7b). The present invention provides a three-level converter half-bridge (1, 1′) having a reduced switching over voltage.</p> |
