| 摘要 |
Provided is a sintered oxide compact target for sputtering comprising indium (In), gallium (Ga), zinc (Zn), oxygen (O) and unavoidable impurities, wherein the composition ratio of the respective elements satisfies the Formula of In x Ga y Zn z O a wherein 0.2 ‰¦ x / (x + y) ‰¦0.8, 0.1 ‰¦z / (x + y + z) ‰¦0.5, a = (3/2) x + (3/2) y + z}, and the number of ZnGa 2 O 4 spinel phases having an average grain size of 3µm or larger existing in a 90µm × 90µm area range of the sintered oxide compact target is 10 or less. With this sintered oxide compact target for sputtering comprising In, Ga, Zn, O and unavoidable impurities, the structure of the sintered compact target is improved, the formation of a phase to become the source of nodules is minimized, and the bulk resistance value is reduced. Whereby provided is a high density IGZO target capable of inhibiting abnormal discharge and which can be used in DC sputtering. |
