发明名称 |
METHOD FOR PRODUCING ALUMINUM NITRIDE CRYSTALS |
摘要 |
Provided is a method for producing inexpensive and high-quality aluminum nitride crystals. Gas containing N atoms is introduced into a melt of a Ga-Al alloy 4, whereby aluminum nitride crystals are made to epitaxially grow on a seed crystal substrate 3 in the melt of the Ga-Al alloy 4. A growth temperature of aluminum nitride crystals is set at not less than 1000 degrees C and not more than 1500 degrees C, thereby allowing GaN to be decomposed into Ga metal and nitrogen gas. |
申请公布号 |
EP2594666(A4) |
申请公布日期 |
2014.04.09 |
申请号 |
EP20110806875 |
申请日期 |
2011.07.14 |
申请人 |
SUMITOMO METAL MINING CO., LTD.;TOHOKU UNIVERSITY |
发明人 |
FUKUYAMA, HIROYUKI;ADACHI, MASAYOSHI;TANAKA, AKIKAZU;MAEDA, KAZUO |
分类号 |
C30B29/38;C30B19/02;H01L21/208 |
主分类号 |
C30B29/38 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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