发明名称 |
METHOD AND APPARATUS FOR MANUFACTURING SiC SINGLE CRYSTAL FILM |
摘要 |
<p>A manufacturing method for a SiC single crystal film which allows stable growth of a SiC epitaxial film with a low doping concentration on a substrate with a diameter of at least 2 inches by the LPE method using a SiC solution in solvent of a melt includes an evacuation step in which the interior of a crystal growth furnace is evacuated with heating until the vacuum pressure at the crystal growth temperature is 5 x 10 -3 Pa or lower prior to introducing a raw material for the melt into the furnace. Then, a crucible containing a raw material for the melt is introduced into the furnace, a SiC solution is formed, and a SiC epitaxial film is grown on a substrate immersed in the solution.</p> |
申请公布号 |
EP2330236(B1) |
申请公布日期 |
2014.04.09 |
申请号 |
EP20090810038 |
申请日期 |
2009.08.28 |
申请人 |
NIPPON STEEL & SUMITOMO METAL CORPORATION;MITSUBISHI ELECTRIC CORPORATION |
发明人 |
KUSUNOKI, KAZUHIKO;KAMEI, KAZUHITO;YASHIRO, NOBUYOSHI;HATTORI, RYO |
分类号 |
C30B29/36;C30B19/02;C30B19/10 |
主分类号 |
C30B29/36 |
代理机构 |
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代理人 |
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地址 |
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