发明名称 |
MRAM having variable word line drive potential |
摘要 |
An MRAM of a spin transfer type is provided with a memory cell 10 and a word driver 30. The memory cell 10 has a magnetic resistance element 1 and a selection transistor TR having one of source/drain electrodes which is connected with one end of the magnetic resistance element 1. The word driver 30 drives a word line WL connected with a gate electrode of the selection transistor TR. The word driver 30 changes a drive voltage of the word line WL according to the write data DW to be written in the magnetic resistance element 1. |
申请公布号 |
US8693238(B2) |
申请公布日期 |
2014.04.08 |
申请号 |
US20070376925 |
申请日期 |
2007.07.13 |
申请人 |
SAKIMURA NOBORU;HONDA TAKESHI;SUGIBAYASHI TADAHIKO;NEC CORPORATION |
发明人 |
SAKIMURA NOBORU;HONDA TAKESHI;SUGIBAYASHI TADAHIKO |
分类号 |
G11C11/00;G11C8/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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