发明名称 Transient suppression device and method therefor
摘要 In one embodiment, a semiconductor device to provide protection for electronic circuits, the semiconductor device typically includes a vertical MOS transistor, a reference circuit, and an amplifier. The amplifier amplifies the reference voltage to enable the vertical MOS transistor responsively to a transient event.
申请公布号 US8693149(B2) 申请公布日期 2014.04.08
申请号 US20090469544 申请日期 2009.05.20
申请人 BALL ALAN R.;ROBB STEPHEN P.;SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC. 发明人 BALL ALAN R.;ROBB STEPHEN P.
分类号 H02H9/00 主分类号 H02H9/00
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