发明名称 Semiconductor device with through silicon via and alignment mark
摘要 A semiconductor device includes: a plurality of semiconductor chips stacked on each other, each of the plurality of semiconductor chips having a semiconductor substrate and a wiring layer; a through electrode penetrating the semiconductor substrate in a thickness direction and electrically connected to each other between the semiconductor chips adjacent to each other; a conductor penetrating the semiconductor substrate in the thickness direction and not electrically connected between the other semiconductor chips; and an insulating separator penetrating the semiconductor substrate in the thickness direction and formed in a shape of a ring surrounding the conductor.
申请公布号 US8692384(B2) 申请公布日期 2014.04.08
申请号 US201213427960 申请日期 2012.03.23
申请人 NAKAMURA NOBUYUKI 发明人 NAKAMURA NOBUYUKI
分类号 H01L23/48 主分类号 H01L23/48
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