发明名称 Method and electronic device for a simplified integration of high precision thinfilm resistors
摘要 The invention relates to a method of manufacturing an integrated circuit. An electrically resistive layer of a material for serving as a thin film resistor (TFR) is deposited. A first electrically insulating layer is deposited on the electrically resistive layer of the TFR. An electrically conductive layer of an electrically conductive material is deposited. An area is left without the conductive layer and the area overlaps the electrically resistive layer of the TFR. A second electrically insulating layer is deposited on top of the conductive layer. A first VIA opening is etched through the second insulating layer, the area without the conductive layer adjacent to the electrically conductive layer and through the first insulating layer down to the electrically resistive layer of the TFR. A conductive material is deposited in the first VIA opening so as to electrically connect the conductive layer and the electrically resistive layer of the TFR.
申请公布号 US8692356(B2) 申请公布日期 2014.04.08
申请号 US201313901337 申请日期 2013.05.23
申请人 TEXAS INSTRUMENTS DEUTSCHLAND GMBH 发明人 DIRNECKER CHRISTOPH;PLOSS WOLFGANG
分类号 H01L49/02 主分类号 H01L49/02
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