| 摘要 |
An SRAM cell using a vertical MISFET is provided, wherein underside source/drain areas of a first access transistor, a first driving transistor and a first load transistor are connected together, and further connected to gates of a second driving transistor and a second load transistor. Underside source/drain areas of a second access transistor, the second driving transistor and the second load transistor are connected together, and further connected to gates of the first driving transistor and the first load transistor. A first arrangement of the first access transistor, the first driving transistor and the first load transistor, and a second arrangement of the second access transistor, the second driving transistor and the second load transistor are symmetric to each other. |
