发明名称 Semiconductor devices and manufacturing methods thereof
摘要 Semiconductor devices and manufacturing methods thereof are disclosed. In one embodiment, a semiconductor device includes a workpiece with a first region having a plurality of first features and a second region having a plurality of second features proximate the first region. The first region and the second region share a patterning overlap region disposed between the first region and the second region. The patterning overlap region includes a residue feature with an aspect ratio of about 4 or less.
申请公布号 US8692296(B2) 申请公布日期 2014.04.08
申请号 US201213370132 申请日期 2012.02.09
申请人 CHEN CHUN-CHANG;YANG SHUN-SHING;FU SHIH-CHI;MO WANG-PEN;HSIEH HUNG-CHANG;TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. 发明人 CHEN CHUN-CHANG;YANG SHUN-SHING;FU SHIH-CHI;MO WANG-PEN;HSIEH HUNG-CHANG
分类号 H01L27/118;H01L21/20 主分类号 H01L27/118
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