| 摘要 |
A parameter extraction method for semiconductor devices includes: providing a first multi-finger device and a second multi-finger device, wherein the gate-finger numbers between the first and second multi-finger devices are different; performing an open de-embedding, then the high-frequency test apparatus measuring a first intrinsic gate capacitance of the first multi-finger device and a second intrinsic gate capacitance of the second multi-finger device; calculating a slope according to the first and second intrinsic gate capacitances, and the first and second gate-finger numbers; performing a 3D capacitance simulation for computing the poly finger-end fringing capacitances; utilizing a long channel device for measuring the gate capacitance and extracting the intrinsic gate capacitance, then calculating an inversion channel capacitance per unit area; and computing a delta channel width of the semiconductor device, according to the slope, the poly finger-end fringing capacitance, and the inversion channel capacitance per unit area. |
