发明名称 Projection objective for a microlithographic EUV projection exposure apparatus
摘要 A projection objective for a microlithographic EUV projection exposure apparatus includes a first mirror and a second mirror. The first mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The second mirror includes a mirror substrate and a reflective coating carried by the mirror substrate. The first and second mirrors are configured so that, with otherwise equal irradiation by EUV light, the mirror substrate of the first mirror compacts less than the mirror substrate of the second mirror under the effect of the EUV light.
申请公布号 US8693098(B2) 申请公布日期 2014.04.08
申请号 US20100904513 申请日期 2010.10.14
申请人 RENNON SIEGFRIED;MANN HANS-JUERGEN;SCHICKETANZ THOMAS;CARL ZEISS SMT GMBH 发明人 RENNON SIEGFRIED;MANN HANS-JUERGEN;SCHICKETANZ THOMAS
分类号 G02B5/08;G02B1/10;G02B5/00 主分类号 G02B5/08
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