发明名称 Semiconductor device and method for manufacturing the same
摘要 A semiconductor device includes an embedding layer in which one or more semiconductor element(s) is embedded and one or more interconnect layers as well as one or more insulation layers on one or both sides of the embedding layer. The embedding layer includes a woven cloth formed by reinforcement fibers. The woven cloth has an opening on its site embedding the semiconductor element. The opening is arranged so that direction of the reinforcement fibers will have a preset angle with respect to a direction of a side of or a tangent to at least a portion of the opening, the preset angle being other than a square angle or a zero angle (parallelism).
申请公布号 US8692364(B2) 申请公布日期 2014.04.08
申请号 US201013389234 申请日期 2010.08.06
申请人 KIKUCHI KATSUMI;NAKASHIMA YOSHIKI;MORI KENTARO;YAMAMICHI SHINTARO;NEC CORPORATION 发明人 KIKUCHI KATSUMI;NAKASHIMA YOSHIKI;MORI KENTARO;YAMAMICHI SHINTARO
分类号 H01L23/06;H01L21/4763;H01L21/48;H01L23/02;H01L23/48;H01L23/522 主分类号 H01L23/06
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