发明名称 |
Resistor integrated with transistor having metal gate |
摘要 |
A method of manufacturing a resistor integrated with a transistor having metal gate includes providing a substrate having a transistor region and a resistor region defined thereon, a transistor is positioned in the transistor region and a resistor is positioned in the resistor region; forming a dielectric layer exposing tops of the transistor and the resistor on the substrate; performing a first etching process to remove portions of the resistor to form two first trenches respectively at two opposite ends of the resistor; forming a patterned protecting layer in the resistor region; performing a second etching process to remove a dummy gate of the transistor to form a second trench in the transistor region; and forming a metal layer filling the first trenches and the second trench. |
申请公布号 |
US8692334(B2) |
申请公布日期 |
2014.04.08 |
申请号 |
US201313949230 |
申请日期 |
2013.07.24 |
申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
CHIOU CHUN-MAO;CHEN TI-BIN;KUO TSUNG-MIN;CHOU SHYAN-LIANG;WANG YAO-CHANG;TSENG CHI-SHENG;YANG JIE-NING;LIAO PO-JUI |
分类号 |
H01L21/70 |
主分类号 |
H01L21/70 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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