发明名称 Method of manufacturing plasmon generator
摘要 A method of manufacturing a plasmon generator includes the steps of: forming an etching mask on a dielectric layer; forming an accommodation part by etching the dielectric layer using the etching mask; and forming the plasmon generator to be accommodated in the accommodation part. The step of forming the etching mask includes the steps of: forming a patterned layer on an etching mask material layer, the patterned layer having a first opening that has a sidewall; forming a structure by forming an adhesion film on the sidewall, the structure having a second opening smaller than the first opening; and etching a portion of the etching mask material layer exposed from the second opening.
申请公布号 US8691102(B1) 申请公布日期 2014.04.08
申请号 US201213731754 申请日期 2012.12.31
申请人 ARAKI HIRONORI;SASAKI YOSHITAKA;ITO HIROYUKI;IKEGAWA YUKINORI;TOMITA SEIICHIRO;TANEMURA SHIGEKI;HEADWAY TECHNOLOGIES, INC. 发明人 ARAKI HIRONORI;SASAKI YOSHITAKA;ITO HIROYUKI;IKEGAWA YUKINORI;TOMITA SEIICHIRO;TANEMURA SHIGEKI
分类号 C03C15/00 主分类号 C03C15/00
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