发明名称 |
Method of manufacturing plasmon generator |
摘要 |
A method of manufacturing a plasmon generator includes the steps of: forming an etching mask on a dielectric layer; forming an accommodation part by etching the dielectric layer using the etching mask; and forming the plasmon generator to be accommodated in the accommodation part. The step of forming the etching mask includes the steps of: forming a patterned layer on an etching mask material layer, the patterned layer having a first opening that has a sidewall; forming a structure by forming an adhesion film on the sidewall, the structure having a second opening smaller than the first opening; and etching a portion of the etching mask material layer exposed from the second opening. |
申请公布号 |
US8691102(B1) |
申请公布日期 |
2014.04.08 |
申请号 |
US201213731754 |
申请日期 |
2012.12.31 |
申请人 |
ARAKI HIRONORI;SASAKI YOSHITAKA;ITO HIROYUKI;IKEGAWA YUKINORI;TOMITA SEIICHIRO;TANEMURA SHIGEKI;HEADWAY TECHNOLOGIES, INC. |
发明人 |
ARAKI HIRONORI;SASAKI YOSHITAKA;ITO HIROYUKI;IKEGAWA YUKINORI;TOMITA SEIICHIRO;TANEMURA SHIGEKI |
分类号 |
C03C15/00 |
主分类号 |
C03C15/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|