| 摘要 |
An etching method of the thin film of the feature base plate is provided to use the improved inductively coupled plasma source and to prevent the contamination of the inside of the reaction chamber and the damage of the processed substrate. Provided is the reaction chamber including the inductively coupled plasma source. The inductively coupled plasma source has the multiple radio frequency antenna. The processed substrate is loaded inside the reaction chamber. The process gas is supplied inside the reaction chamber(S10). The multiple radio frequency antenna is operated to form inductively coupled in the reaction chamber (S30). The thin film of the processed substrate is etched by the inductively coupled plasma(S40). |
