发明名称 |
Deposition apparatus, and deposition method |
摘要 |
A deposition mask 601 is used to form a thin film 3 in a prescribed pattern on a substrate 10 by deposition. Each of a plurality of improved openings 62A of the deposition mask 601 has a protruding opening portion 64, and is formed so that the opening amount at an end in a lateral direction is larger than that in a central portion in the lateral direction. In a deposition apparatus 50, the deposition mask 601 is held in a fixed relative positional relation with a deposition source 53 by a mask unit 55. In the case of forming the thin film 3 in a stripe pattern on the substrate 10 by the deposition apparatus 50, deposition particles are sequentially deposited on the substrate 10 while relatively moving the substrate 10 along a scanning direction with a gap H being provided between the substrate 10 and the deposition mask 601. |
申请公布号 |
US8691016(B2) |
申请公布日期 |
2014.04.08 |
申请号 |
US201013522007 |
申请日期 |
2010.10.29 |
申请人 |
SONODA TOHRU;HAYASHI NOBUHIRO;KAWATO SHINICHI;SHARP KABUSHIKI KAISHA |
发明人 |
SONODA TOHRU;HAYASHI NOBUHIRO;KAWATO SHINICHI |
分类号 |
B05C11/11;C23C16/00;H01L21/00;H01L21/31;H01L21/469 |
主分类号 |
B05C11/11 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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