SENSOR AMPLIFIER CIRCUIT IN NONVOLATILE MEMORY DEVICE HAVING IMPROVED SENSING EFFICIENCY

摘要

A sensor amplifier circuit of a nonvolatile semiconductor memory device with improved sensing efficiency is disclosed. The sensor amplifier circuit of a nonvolatile semiconductor memory device of the present invention comprises: a preliminary data line configured to receive data of a selected nonvolatile memory cell; a main data line; a line switching unit formed between the preliminary data line and the main data line; and a sensing amplifying unit configured to generate a sensing output by detecting and amplifying a voltage level of the main data line. At this time, the line switching unit is operated to electrically separate the preliminary data line and the main data line in program mode, and to electrically connect the preliminary data line and the main data line in readout mode. The sensor amplifier circuit of a nonvolatile semiconductor memory device of the present invention can efficiently reflect whether a selected nonvolatile memory cell is a turn-on cell or a turn-off cell, thereby improving sensing efficiency.