发明名称 Method for forming resist under layer film, pattern forming method and composition for resist under layer film
摘要 A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film.
申请公布号 US8691496(B2) 申请公布日期 2014.04.08
申请号 US201213609373 申请日期 2012.09.11
申请人 KONNO YOUSUKE;YOSHIMURA NAKAATSU;TOYOKAWA FUMIHIRO;SUGITA HIKARU;JSR CORPORATION 发明人 KONNO YOUSUKE;YOSHIMURA NAKAATSU;TOYOKAWA FUMIHIRO;SUGITA HIKARU
分类号 G03F7/004 主分类号 G03F7/004
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