发明名称 |
Method for forming resist under layer film, pattern forming method and composition for resist under layer film |
摘要 |
A method for forming a resist under layer film includes providing a composition for forming a resist under layer film on a substrate which is to be processed. The composition includes a solvent and a calixarene compound or a derivative of the calixarene compound. The composition is set under an oxidizing atmosphere with an oxygen content of 1% or more by volume to form a resist under layer film. |
申请公布号 |
US8691496(B2) |
申请公布日期 |
2014.04.08 |
申请号 |
US201213609373 |
申请日期 |
2012.09.11 |
申请人 |
KONNO YOUSUKE;YOSHIMURA NAKAATSU;TOYOKAWA FUMIHIRO;SUGITA HIKARU;JSR CORPORATION |
发明人 |
KONNO YOUSUKE;YOSHIMURA NAKAATSU;TOYOKAWA FUMIHIRO;SUGITA HIKARU |
分类号 |
G03F7/004 |
主分类号 |
G03F7/004 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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