发明名称 |
Methods for forming an integrated circuit with straightened recess profile |
摘要 |
Methods are provided for forming an integrated circuit. In an embodiment, the method includes forming a sacrificial mandrel overlying a base substrate. Sidewall spacers are formed adjacent sidewalls of the sacrificial mandrel. The sidewall spacers have a lower portion that is proximal to the base substrate, and the lower portion has a substantially perpendicular outer surface relative to the base substrate. The sidewall spacers also have an upper portion that is spaced from the base substrate. The upper portion has a sloped outer surface. A first dielectric layer is formed overlying the base substrate and is conformal to at least a portion of the upper portion of the sidewall spacers. The upper portion of the sidewall spacers is removed after forming the first dielectric layer to form a recess having a re-entrant profile in the first dielectric layer. The re-entrant profile of the recess is straightened. |
申请公布号 |
US8691696(B2) |
申请公布日期 |
2014.04.08 |
申请号 |
US201213476860 |
申请日期 |
2012.05.21 |
申请人 |
CAI XIUYU;ZHANG XUNYUAN;XIE RUILONG;RYAN ERROL T.;IACOPONI JOHN;GLOBALFOUNDRIES, INC. |
发明人 |
CAI XIUYU;ZHANG XUNYUAN;XIE RUILONG;RYAN ERROL T.;IACOPONI JOHN |
分类号 |
H01L21/311 |
主分类号 |
H01L21/311 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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