Fast turn on silicon controlled rectifiers for ESD protection

摘要

Fast turn on silicon controlled rectifiers for ESD protection. A semiconductor device includes a semiconductor substrate of a first conductivity type; a first well of a second conductivity type; a second well of the second conductivity type; a first diffused region of the first conductivity type and coupled to a first terminal; a first diffused region of the second conductivity type; a second diffused region of the first conductivity type; a second diffused region of the second conductivity type in the second well; wherein the first diffused region of the first conductivity type and the first diffused region of the second conductivity type form a first diode, and the second diffused region of the first conductivity type and the second diffused region of the second conductivity type form a second diode, and the first and second diodes are series coupled between the first terminal and the second terminal.