DOHERTY RF POWER AMPLIFIER USING LDMOS FET AND GAN FET

摘要

The present invention relates to a Doherty amplifier which is a high efficiency modulation amplifier for a transmitter with large power to control the phase of a main amplifier which amplifies a basic signal and the phase of an auxiliary amplifier which amplifies a peak signal and to synthesize the phases in an output. The Doherty amplifier according to the present invention is composed of a carrier amplifier with a GaN FET and a peaking amplifier with an LDMOS FET which are connected in parallel. Thereby, in comparison with an existing Doherty amplifier structure, efficiency is remarkably improved in comparison with the LDMOS FET and costs are remarkably reduced in comparison with a product using the GaN FET.