发明名称 HYBRID SILICON WAFER
摘要 A hybrid silicon wafer which is a silicon wafer having a structure wherein monocrystalline silicon is embedded in polycrystalline silicon that is prepared by the unidirectional solidification/melting method. The longitudinal plane of crystal grains of the polycrystalline portion prepared by the unidirectional solidification/melting method is used as the wafer plane, and the monocrystalline silicon is embedded so that the longitudinal direction of the crystal grains of the polycrystalline portion forms an angle of 120° to 150° relative to the cleaved surface of the monocrystalline silicon. Thus provided is a hybrid silicon wafer comprising the functions of both a polycrystalline silicon wafer and a monocrystalline wafer.
申请公布号 KR101382657(B1) 申请公布日期 2014.04.07
申请号 KR20127007218 申请日期 2010.10.28
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分类号 C30B11/02;C30B31/02;C30B33/06;H01L21/02 主分类号 C30B11/02
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