| 摘要 |
PURPOSE: A light emitting diode and a manufacturing method thereof are provided to effectively emit light to outside by controlling a wet etch process by using an etch pattern which is made through a dry etch process. CONSTITUTION: A plurality of semiconductor layers comprises an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The n-type semiconductor layer, the active layer, and the p-type semiconductor layer are formed on a substrate. A plurality of metal layers(63) is formed between the substrate and the semiconductor layers. An n-type electrode(82) is formed at least one side of an exposed side and floor side by eliminating a part of the n-type semiconductor layer through a dry etch process. A p-type electrode(81) is formed on a constant area of the exposed metal layer by eliminating the semiconductor layers. |
