发明名称 METHOD AND MASK FOR ENHANCING THE RESOLUTION OF PATTERNING 2-ROW HOLES
摘要 A photolithography mask including a plurality of mask features. Adjacent mask features are separated by a gap and are offset from each other such that individual mask features have one-side dense portions and two-side dense portions. Also a photolithography method that includes a step of providing a substantially opaque mask having N stepped rows of offset, substantially transparent, rectangular mask features, where N is an integer and N>=2. The method also includes illuminating a photoresist layer located over an underlying material with dipole illumination through the substantially transparent, rectangular mask features in the substantially opaque mask to form 2N rows of exposed regions in the photoresist layer. The exposed regions have a substantially elliptical or substantially circular shape when viewed from above the photoresist layer.
申请公布号 KR20140042794(A) 申请公布日期 2014.04.07
申请号 KR20137027008 申请日期 2012.03.30
申请人 SANDISK TECHNOLOGIES, INC. 发明人 WANG CHUN MING;HUANG CHENCHE;HIGASHITANI MASAAKI
分类号 G03F1/26;G03F1/32;G03F1/36;G03F7/26;H01L21/027 主分类号 G03F1/26
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