| 摘要 |
The present invention relates to a transparent electronic device having 2D transition metal dichalcogenides with multi-layers, an optoelectronic device, and a transistor device. Preferably, the present invention relates to form a channel layer between transparent layers by forming a multilayer which consisting of at least three layers of a single transition metal dichalcogenide. For this, a transparent electronic device using transition metal dichalcogenides with multi-layers includes electrodes made of a transparent conductive material, and a channel region which is formed between the electrodes by the transition metal dichalcogenides. |
