| 摘要 |
The present invention relates to an apparatus for treating substrate. More particularly, the present invention relates to an apparatus for treating substrate using plasma. an apparatus for treating a substrate according to the embodiment of the present invention includes a chamber having an inner process space, a support member which is arranged in the chamber and supports the substrate, a gas supply unit which supplies a gas to the chamber, a plasma source which generates plasma from the gas supplied from the chamber, a baffle which surrounds the support member in the process chamber and has through holes for discharging the gas in the process space, and a shield unit which prevents an electric field from being leaked from the inner part of the chamber to the outer part of the chamber. |
