| 摘要 |
PURPOSE: A light emitting device is provided to improve external quantum efficiency by forming an uneven part having predetermined roughness on the surface of a transparent electrode and the surface of an n-type semiconductor layer. CONSTITUTION: An n-type semiconductor layer(120) is formed on a substrate(110). An active layer(130) is formed on the n-type semiconductor layer. A p-type semiconductor layer(140) is formed on the active layer. A transparent electrode layer(150) is formed on the p-type semiconductor layer. An uneven part is formed on the surface of the transparent electrode layer. A P electrode(170) is formed on the transparent electrode layer. An N electrode(160) is formed on the exposed -type semiconductor layer through an electrode pad formation process. A high concentration ion injecting layer is formed between the p-type semiconductor layer and the transparent electrode layer. |
