ETCHANT COMPOSITION FOR ETCHING DOUBLE LAYER OF METAL LAYER AND INDIUM OXIDE LAYER AND METHOD FOR ETCHING USING THE SAME

摘要

Disclosed are a metal film, an etchant composition for etching a double film of an indium oxide film at regular speed and an etching method using the same. The etchant composition consists of 23-40 wt% of hydrogen peroxide; 0.01-2 wt% of fluorspar compounds; 0.1-1 wt% of azole-containing compounds; 0.1-10 wt% of sulfonic acid compounds; 10-500 ppm of indium compounds; and the rest of water. [Reference numerals] (AA) Example 1; (BB) MoTi/inorganic film; (CC) MoTi/organic film; (DD) ITO/inorganic film; (EE) MoTi/ITO/organic film