| 摘要 |
<p>The present invention introduces a separation type unit pixel of an image sensor having a three-dimensional structure for maximizing the efficiency of transmitting a charge generated in a photodiode to a floating diffusion region. The separation type unit pixel of an image sensor having a three-dimensional structure comprises: a first wafer having a photodiode and a transmission transistor formed thereon; and a second wafer having a reset transistor and a source follower transistor formed thereon. In particular, N_ground voltage, which has a voltage level lower than a ground voltage used for the second wafer, is applied to the positive region of the photodiode.</p> |
