| 摘要 |
Embodiments of the present invention relate to a light emitting device, a method of manufacturing the light emitting device, a light emitting device package, and an illumination system. The light emitting device according to an embodiment comprises: a first conductive type semiconductor layer (112); an active layer (114) on the first conductive type semiconductor layer (112) having a well layer and a barrier layer (114b); and a second conductive type semiconductor layer (116) on the active layer (114). The barrier layer (114b) includes: a first barrier layer (114b1) on the first conductive type semiconductor layer and a second barrier layer (114b2) between the first barrier layer (114b1) and the second conductive type semiconductor layer (116). The first barrier layer (114b1) includes a GaN barrier layer (114bg) and an Al_xGa_(1-x)N barrier layer (114ba) on the GaN barrier layer (114bg). |
