| 摘要 |
The prevent invention relates to a manufacturing method of semiconductor light emitting device comprising; a step of preparing a plurality of semiconductor layers including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity, and an active layer which is placed between the first and second semiconductor layers and produces light through the re-combination of an electron and a hole; a step of forming a branch electrode to be electrically connected with the second semiconductor layer; a step of forming a non-conductive reflection film on the second semiconductor layer and the branch electrode located above the second semiconductor layer so that the light from the active layer is reflected to the first semiconductor layer which is a substrate side; a step of partially eliminating non-conductive reflection film formed on a boundary line of a border of the semiconductor light emitting device along the boundary line; a step of separating an individual semiconductor light emitting device along the boundary line of the border of the semiconductor light emitting device. |
