CONTACT STRUCTURE OF SEMICONDUCTOR DEVICE

摘要

The present invention relates to a contact structure of a semiconductor device. The exemplary structure of the contact structure for a semiconductor device includes a substrate which includes a main surface and a trench under the main surface; a deformation material which fills the trench and has a lattice constant which is different from that of the substrate; an interlayer dielectric (ILD) which has an opening part which is formed on the deformation material and includes the sidewall of an insulating and the lower part of the deformation material; a dialectic layer which coats the side wall and the lower part of the opening part and has a thickness of 1 nm to 10 nm; and a metal layer which fills the coated opening part of the dielectric layer. [Reference numerals] (102) Provide a substrate including the main surface and the trench under the main surface; (104) Epi-grow a deformation material in the trench. In here, a lattice constant of the deformation material is different from that of the substrate.; (106) Interlayer dielectric(ILD) is formed on the deformation material.; (108) Opening part is formed on the interlayer dielectric(ILD) to expose one part of the deformation material; (110) Coat the inner part of the opening part and form a first metal layer extended on the ILD layer; (112) Process the first metal layer to form the ILD layer on the deformation material; (114) Form a second metal layer inside the opening coated in the ILD layer