| 摘要 |
The purpose of the present invention is to provide a semiconductor device manufacturing method capable of forming a carbon based layer having a proper property in a temperature region of 700°C or less, a substrate processing method, a substrate processing device, and a recording medium. A layer which has a carbon layer on the substrate is formed by repeating a cycle several times which includes a process of supplying an organic gas into a process room and sealing the organic gas in the process room in a state of heating a substrate received in the process room, a process of maintaining a state of sealing the organic gas in the process room, and a process of discharging the organic gas in the process room. |
