| 摘要 |
The purpose of the present invention is to provide a method and an apparatus for heat treatment which can suppress the diffusion of impurities and prevent process damage. A first irradiation in which the emission output of a flash lamp reaches a maximum value for 1-20 milliseconds is performed. Therefore, the surface temperature of a semiconductor wafer increases from a preheating temperature (T1) to a targeted temperature (T2) for 1-20 milliseconds. As a result, impurities are activated. Next, a second irradiation in which the emission output of the flash lamp slowly decreases to the minimum value for 3-50 milliseconds is performed. Therefore, the surface temperature of the semiconductor wafer (W) stays within a range of ±25°C from the targeted temperature (T2) for 3-50 milliseconds. As a result, the diffusion of impurities can be suppressed, and process damage can be prevented. [Reference numerals] (AA) Surface temperature (°C); (BB) Time |
