| 摘要 |
A thin film transistor includes a gate part which includes a gate electrode and a light blocking electrode extending from the gate electrode. The light blocking electrode prevents a light provided from beneath the gate electrode from being guided to a semiconductor layer. The light blocking electrode is overlapped by two source electrodes and a drain electrode arranged between the two source electrodes, all of which have an I-shape. The width of the light blocking electrode is selected so that a parasitic capacitance between a source part and the gate part may be controlled. Thus, a photocurrent of the thin film transistor may be reduced, and a kickback voltage difference between pixels in the display panel may also be reduced. |
