SEMICONDUCTOR DEVICE AND METHOD FOR FORMING USING THE SAME

摘要

A semiconductor device according to the present invention includes an interlayer dielectric layer which is formed on a semiconductor substrate and has a contact hole, a contact plug which is connected to the semiconductor substrate in the interlayer dielectric, an air spacer which is formed in a contact plug sidewall, an SEG layer which is connected to a contact plug upper part and buries a part of the contact hole, and a spacer which is formed in the contact hole sidewall of the SEG layer upper part. The refresh property and the operation speed of the semiconductor device can be improved by stably forming an air gap in the sidewall of a storage electrode contact plug and reducing bit line capacitance.