| 摘要 |
<p>The present invention provides a method for manufacturing a crystalline silicon film which can prevent cracks in a substrate, a lower protective layer, and a crystalline silicon film, and a method for manufacturing a semiconductor device. A layer including a semiconductor film is formed on a substrate whose thermal expansion coefficient is 6×10-7/°C-38×10-7/°C inclusive or, desirably, 6×10-7/°C-31.8×10-7/°C inclusive, and the layer is heated. Next, the heated layer is irradiated with a laser beam, and the semiconductor layer crystallizes, and a crystalline semiconductor film is formed. After the heating process, the layer including the semiconductor film formed on the substrate is formed to have the total stress of the layer including the semiconductor layer which is -500 N/m to +50 N/m inclusive or, desirably, -150 N/m to 0 N/m inclusive.</p> |
