发明名称 PRODUCTION METHOD OF REFLECTION MASK
摘要 PROBLEM TO BE SOLVED: To provide a production method of a reflection mask, in which when a defective part in a smaller size than an original mask pattern, such as a designed defective part, is to be formed as an absorber pattern of a reflective mask, features of the defective part can be formed as designed, compared to a conventional method.SOLUTION: The production method comprises: forming a first hard mask pattern by using a first resist pattern on an absorption layer of a reflective mask blank; forming a second resist pattern that at least partially overlaps the absorption layer exposed through the first hard mask pattern; etching the first hard mask pattern exposed through the second resist pattern to form a second hard mask pattern; and etching the absorption layer by using the second hard mask pattern as an etching mask.
申请公布号 JP2014060317(A) 申请公布日期 2014.04.03
申请号 JP20120205402 申请日期 2012.09.19
申请人 DAINIPPON PRINTING CO LTD 发明人 ABE TSUKASA;INAZUKI YUICHI
分类号 H01L21/027;G03F1/24;G03F1/38;G03F1/84 主分类号 H01L21/027
代理机构 代理人
主权项
地址
您可能感兴趣的专利