| 摘要 |
A method of determining a saturation current degradation that includes measuring, for a MOS integrated circuit fabrication process, a first dependence of a saturation current (Idsat) degradation with gate voltage (Vgs) at a level that causes Idsat degradation by bias temperature instability (BTI). A second dependence of the saturation current (Idsat) recovery versus gate voltage (Vgs) is also measured for the MOS integrated circuit fabrication process. A recovery voltage threshold value is determined. The recovery voltage threshold value is indicative of Vgs voltages below which BTI recovery occurs. A circuit having at least one MOS transistor that includes a first MOS transistor is simulated. Based on the results of the simulation, a BTI recovery factor is calculated based on an amount of time the Vgs of the first MOS transistor is below the recovery voltage threshold value. |
