SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor device having a groove provided in a semiconductor substrate, a gate insulating film provided so as to cover an inside surface of the groove, a first conductive film provided inside the groove in a position in which a first upper end surface is lower than the outer surface of the semiconductor substrate, a second conductive film provided inside the groove in a position that protrudes beyond the first upper end surface and in which a second upper end surface is higher than the outer surface of the semiconductor substrate, and a cap insulating film provided inside the groove so as to cover a protruding part of the second conductive film that protrudes beyond the first upper end surface.