发明名称 IODINE-BASED ETCHING SOLUTION AND ETCHING METHOD
摘要 Technical Problem The present invention aims to provide an iodine-based etching solution having a high ratio of etching rate of a palladium material to that of a metal material other than the palladium material, in particular, an iodine-based etching solution capable of relatively decreasing the concentration of an organic solvent in the etching solution. Solution to Problem The iodine-based etching solution of the present invention is an iodine-based etching solution to etch a material in which a palladium material and a metal material other than the palladium material coexist, and comprises a water-compatible organic solvent and a water-soluble polymer compound.
申请公布号 US2014091052(A1) 申请公布日期 2014.04.03
申请号 US201314039221 申请日期 2013.09.27
申请人 KANTO KAGAKU KABUSHIKI KAISHA 发明人 NAGASHIMA KAZUAKI;TAKAHASHI HIDEKI
分类号 C09K13/00;C23F1/42;C23F1/44 主分类号 C09K13/00
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