发明名称 |
BISMUTH ANTIMONY TELLURIDE NANO-BULK COMPOSITES WITH HIGH FIGURES OF MERIT (ZT) |
摘要 |
<p>According to various aspects, exemplary embodiments are disclosed of Bismuth Antimony Telluride (BiSbTe) based nano-bulk composites having high dimensionless figures of merit (ZT) and with nanostructured BiSbTe as the matrix (host) and bulk BiSbTe as the inclusion (guest). In an exemplary embodiment of a thermoelectric nano- bulk composite material, there is a matrix including nanostructured bismuth antimony telluride. The thermoelectric nano-bulk composite material also includes bulk bismuth antimony telluride in the matrix. A weight percentage ratio of the nanostructured bismuth antimony telluride to the bulk bismuth antimony telluride is at least one to one or higher.</p> |
申请公布号 |
WO2014051709(A1) |
申请公布日期 |
2014.04.03 |
申请号 |
WO2013US42537 |
申请日期 |
2013.05.23 |
申请人 |
LAIRD TECHNOLOGIES, INC. |
发明人 |
KHANDERI, JAYAPRAKASH;PURKAYASTHA, ARUP;PURUSHOTTAM, JOSHI |
分类号 |
H01L35/18 |
主分类号 |
H01L35/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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