发明名称 BISMUTH ANTIMONY TELLURIDE NANO-BULK COMPOSITES WITH HIGH FIGURES OF MERIT (ZT)
摘要 <p>According to various aspects, exemplary embodiments are disclosed of Bismuth Antimony Telluride (BiSbTe) based nano-bulk composites having high dimensionless figures of merit (ZT) and with nanostructured BiSbTe as the matrix (host) and bulk BiSbTe as the inclusion (guest). In an exemplary embodiment of a thermoelectric nano- bulk composite material, there is a matrix including nanostructured bismuth antimony telluride. The thermoelectric nano-bulk composite material also includes bulk bismuth antimony telluride in the matrix. A weight percentage ratio of the nanostructured bismuth antimony telluride to the bulk bismuth antimony telluride is at least one to one or higher.</p>
申请公布号 WO2014051709(A1) 申请公布日期 2014.04.03
申请号 WO2013US42537 申请日期 2013.05.23
申请人 LAIRD TECHNOLOGIES, INC. 发明人 KHANDERI, JAYAPRAKASH;PURKAYASTHA, ARUP;PURUSHOTTAM, JOSHI
分类号 H01L35/18 主分类号 H01L35/18
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