发明名称 |
BOTTOM AND SIDE PLASMA TUNING HAVING CLOSED LOOP CONTROL |
摘要 |
<p>An apparatus for plasma processing a substrate is provided. The apparatus comprises a processing chamber, a substrate support disposed in the processing chamber, and a lid assembly coupled to the processing chamber. The lid assembly comprises a conductive gas distributor coupled to a power source. A tuning electrode may be disposed between the conductive gas distributor and the chamber body for adjusting a ground pathway of the plasma. A second tuning electrode may be coupled to the substrate support, and a bias electrode may also be coupled to the substrate support.</p> |
申请公布号 |
WO2014052228(A1) |
申请公布日期 |
2014.04.03 |
申请号 |
WO2013US61155 |
申请日期 |
2013.09.23 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
ROCHA-ALVAREZ, JUAN CARLOS;BANSAL, AMIT KUMAR;BALASUBRAMANIAN, GANESH;ZHOU, JIANHUA;SANKARAKRISHNAN, RAMPRAKASH;AYOUB, MOHAMAD A.;CHEN, JIAN |
分类号 |
H01L21/02;H01L21/205 |
主分类号 |
H01L21/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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