| 摘要 |
The invention relates to a direct bonding process, which comprises: positioning a first wafer (10) on the surface of a chuck (2), said surface comprising grooves (4); applying in the grooves (4) a first pressure lower than a second pressure seen by the exposed side of the first wafer (10); and bringing a second wafer (16) into contact with the exposed side of the first wafer (10), then initiating the propagation of a bonding wave between the two wafers while the first and second pressures are maintained. |
