| 摘要 |
PROBLEM TO BE SOLVED: To suppress a deterioration in a nonvolatile memory and to write data at a high speed.SOLUTION: Write data is stored in a ReRAM when a page use rate R is less than a threshold Rth1 and when the write data is high frequency rewrite data. When an empty capacity Semp2 of the ReRAM is less than a threshold Sth (step S110), and when data of the ReRAM is low frequency rewrite data and a page use rate R when object data is stored in a flash memory 22 is equal to or more than a threshold Rth3 (steps S120, S130), data of a logical sector included in N logical page addresses stored in a mobile list is read from the ReRAM and written in the flash memory (steps S140 to S160). This can suppress a deterioration in the flash memory and write data at a high speed. |
