发明名称 CARBON NANO-TUBE AND FIELD EFFECT TRANSISTOR
摘要 PROBLEM TO BE SOLVED: To reduce contact resistance at a junction part of a semi-conductor and a metal.SOLUTION: A carbon nano-tube includes: a first region 22 of a cylindrical shape that expresses either one property of a metal and a semi-conductor; and a second region 24 that has a shape in which the cylindrical shape is collapsed, and expresses the other property of the metal and the semi-conductor. Semi-conductor-metal joint can be realized in one carbon nano-tube, and contact resistance at a semi-conductor-metal junction part can be reduced by the carbon nano-tube.
申请公布号 JP2014058432(A) 申请公布日期 2014.04.03
申请号 JP20120205866 申请日期 2012.09.19
申请人 FUJITSU LTD 发明人 OBUCHI MARI
分类号 C01B31/02;H01L21/28;H01L29/06;H01L29/417;H01L29/786 主分类号 C01B31/02
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