| 摘要 |
<p>Disclosed is a chemical mechanical polishing solution. The polishing solution comprises water, ceria ground particulates, oxidizer and water soluble cyclic oligosaccharide. The chemical mechanical polishing solution in the present invention has a high SiO2 polishing rate, a high selection ratio of SiO2/Si3N4 removal rates, and a high Ta polishing rate. Meanwhile, the polishing solution is individually wrapped, and easy to use, and the polishing performance remains constant in a long time.</p> |
