| 摘要 |
<p>This semiconductor device manufacturing method has: a first step wherein a planar silicon layer is formed on a silicon substrate, and a first columnar silicon layer and a second columnar silicon layer are formed on the planar silicon layer; a second step wherein an oxide film hard mask is formed on the first columnar silicon layer and the second columnar silicon layer, and a second oxide film thicker than a gate insulating film is formed on the planar silicon layer; and a third step wherein the gate insulating film is formed around the first columnar silicon layer and the second columnar silicon layer, a metal film and a polysilicon film are formed around the gate insulating film, said polysilicon film having a thickness less than a half of a gap between the first columnar silicon layer and the second columnar silicon layer, a third resist for forming gate wiring is formed, and the gate wiring is formed by performing anisotropic etching.</p> |
