| 摘要 |
The present invention relates to a method of cleaning an MOCVD reaction chamber in situ. According to the method of the present invention, first cleaning gas is introduced into a reaction chamber, and converted into first plasma in the reaction chamber. A carbon organic material existing in the reaction chamber is completely removed by maintaining the internal pressure of the reaction chamber in a first pressure range preset for a first period of time. The first cleaning gas includes first oxygen-containing gas. Second cleaning gas is introduced into the reaction chamber, and converted into second plasma in the reaction chamber, thereby completely removing a metallic oxide existing in the reaction chamber. The second cleansing gas includes first halogen-containing gas. [Reference numerals] (S101) First cleaning gas is introduced into a reaction chamber (10), and converted into first plasma in the reaction chamber (10), and the internal pressure of the reaction chamber (10) is maintained for a first period of time in a preset first pressure range, thereby completely removing a carbon organic material existing in the reaction chamber (10) and converting metal inside the reaction chamber (10) into a metallic oxide.; (S102) Second cleaning gas is introduced into the reaction chamber (10), and converted into second plasma in the reaction chamber (10), and the internal pressure of the reaction chamber (10) is maintained for a second period of time in a preset second pressure range, thereby removing a metallic oxide, metal, and the compound thereof remaining in the reaction chamber (10). |
